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Si5402BDC

Specifications Parameter Symbol Si5402BDC Si5402DC Unit Drain-Source Voltage VDS 30 30 V Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current TA = 25 ID 6.7 6.7 A TA = 70 4.8 4.8 Pulsed Drain Current IDM 20 20 Continuous Source Current(MOSFET Diode C...

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Si5402BDC: Specifications Parameter Symbol Si5402BDC Si5402DC Unit Drain-Source Voltage VDS 30 30 V Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current TA = 25 ID 6.7 6.7 A ...

Si5402BDC Data Sheet

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Part Number:
Si5402BDC
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Description



Specifications

Parameter Symbol Si5402BDC Si5402DC Unit
Drain-Source Voltage VDS 30 30 V
Gate-Source Voltage VGS ±20 ±20
Continuous Drain Current TA = 25 ID 6.7 6.7 A
TA = 70 4.8 4.8
Pulsed Drain Current IDM 20 20
Continuous Source Current
(MOSFET Diode Conduction)		 IS 2.1 2.1
Power Dissipation
 TA = 25 PD 2.5 2.5 W
TA = 70 1.3 1.3
Maximum Junction-to-Ambient RthJA 50 50 /W
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 55 to 150





Description

N-Channel 30-V (D-S) MOSFET Si5402BDC




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