Features: · TrenchFET®Power MOSFET· Ultra-Low On-Resistance· Thermally Enhanced ChipFET Package· 40% Smaller Footprint Than TSOP-6ApplicationLoad Switch, PA Switch, and Battery Switch for Portable DevicesPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source V...
Si5401DC: Features: · TrenchFET®Power MOSFET· Ultra-Low On-Resistance· Thermally Enhanced ChipFET Package· 40% Smaller Footprint Than TSOP-6ApplicationLoad Switch, PA Switch, and Battery Switch for Porta...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter | Symbol | 5 secs | Steady State | Unit | |
Drain-Source Voltage | VDS | -12 | V | ||
Gate-Source Voltage | VGS | ±8 | |||
Continuous Drain Current (TJ = 150)a | TA = 25 | ID | -7.1 | -5.2 | A |
TA = 85 | -5.1 | -3.7 | |||
Pulsed Drain Current(10 s Pulse Width) | IDM | -20 | |||
Continuous Source Current (Diode Conduction)a | IS | -2.1 | -1.1 | ||
Maximum Power Dissipationa | TA = 25 | PD | 2.5 | 1.3 | W |
TA = 85 | 1.3 | 0.7 | |||
Soldering Recommendations (Peak Temperature)b, c | 260 | ||||
Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 |