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Si4500BDY

Features: ·TrenchFET® Power MOSFETPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 10 sec Steady State 10 sec Steady State Drain-Source Voltage VDS 20 20 V Gate-Source Voltage VGS ±12 ±12 Continuous Drain Current (TJ = 150)a,b TA = 25 ID 9.1 6.6...

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SeekIC No. : 004490309 Detail

Si4500BDY: Features: ·TrenchFET® Power MOSFETPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 10 sec Steady State 10 sec Steady State Drain-Source Voltage VDS 20 20 V ...

Si4500BDY Data Sheet

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Part Number:
Si4500BDY
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

·TrenchFET® Power MOSFET




Pinout

Connection Diagram




Specifications

Parameter Symbol N-Channel P-Channel Unit
10 sec Steady State 10 sec Steady State
Drain-Source Voltage VDS 20 20 V
Gate-Source Voltage VGS ±12 ±12
Continuous Drain Current (TJ = 150)a,b TA = 25 ID 9.1 6.6 −5.3 −3.8 A
TA = 70 7.3 5.3 −4.9 −3.1
Pulsed Drain Current IDM 30 −20
Continuous Source Current (Diode Conduction)a,b IS 2.1 1.1 -2.1 −1.1
Maximum Power Dissipationa,b TA = 25 PD 2.5 1.3 2.5 1.3 W
TA = 70 1.6 0.8 1.6 0.8
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150





Description

Complementary MOSFET Half-Bridge (N- and P-Channel) Si4500BDY
 



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