SI4500BDY-T1-GE3, US $ .29-.38 , Vishay/Siliconix, SI4500BDY-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00156607 Detail

SI4500BDY-T1-GE3: MOSFET 20V 9.1/5.3A 2.5W 20/60mohm @ 4.5V

SI4500BDY-T1-GE3 Data Sheet

US $ .29~.38 / Piece | Get Latest Price

Part Number:: SI4500BDY-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

Price Break

Qty
0~1330
1330~2500
2500~5000
5000~7500

Unit Price
$.38
$.34
$.3
$.29

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/12/21

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Recent History
What is this?

Si4500BDY evaluate
Features: ·TrenchFET® Power MOSFETPinoutSpecifications Parameter Symbol N-Channel P-Ch...
SI4500BDY-T1 evaluate
MOSFET 20V 9.1/5.3A 1.3W
SI4500BDY-T1-E3 evaluate
US $.5 - .71 / Piece

MOSFET 20V 7/4.5A 2.5W

Product Details

Quick Details

Transistor Polarity :	N and P-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 12 V	Continuous Drain Current :	6.6 A, 3.8 A
Resistance Drain-Source RDS (on) :	20 mOhms, 60 mOhms	Configuration :	Dual
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOIC-8 Narrow	Packaging :	Reel

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Transistor Polarity : N and P-Channel
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 6.6 A, 3.8 A
Resistance Drain-Source RDS (on) : 20 mOhms, 60 mOhms

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SI4500BDY-T1-GE3

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