Si4100DY-T1-E3, US $ .54-.76 , Vishay/Siliconix, Si4100DY-T1-E3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00148609 Detail

Si4100DY-T1-E3: MOSFET 100V 6.8A 6.0W

Si4100DY-T1-E3 Data Sheet

US $ .54~.76 / Piece | Get Latest Price

Part Number:: Si4100DY-T1-E3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

Price Break

Qty
0~1
1~25
25~50
50~100

Unit Price
$.76
$.6
$.57
$.54

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/12/27

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Recent History
What is this?

Si4100DY evaluate
DescriptionSi4100DY N-Channel 100-V (D-S) MOSFET
SI4100DY-T1-GE3 evaluate
US $.64 - 1.03 / Piece

MOSFET 100V 6.8A 6.0W 63mohm @ 10V
Si4102DY evaluate
DescriptionSi4102DY N-Channel 100-V (D-S) MOSFET

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	4.4 A
Resistance Drain-Source RDS (on) :	0.063 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOIC-8 Narrow	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.063 Ohms
Continuous Drain Current : 4.4 A

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Si4100DY-T1-E3

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