MOSFET 100V 6.8A 6.0W 63mohm @ 10V
SI4100DY-T1-GE3: MOSFET 100V 6.8A 6.0W 63mohm @ 10V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 4.4 A | ||
Resistance Drain-Source RDS (on) : | 0.063 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |