SI4100DY-T1-GE3

MOSFET 100V 6.8A 6.0W 63mohm @ 10V

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SI4100DY-T1-GE3 Picture
SeekIC No. : 00153443 Detail

SI4100DY-T1-GE3: MOSFET 100V 6.8A 6.0W 63mohm @ 10V

floor Price/Ceiling Price

US $ .64~1.03 / Piece | Get Latest Price
Part Number:
SI4100DY-T1-GE3
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~50
  • 50~100
  • Unit Price
  • $1.03
  • $.73
  • $.68
  • $.64
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.4 A
Resistance Drain-Source RDS (on) : 0.063 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.063 Ohms
Continuous Drain Current : 4.4 A


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