Si2306DS Selling Leads, Price trend, Si2306DS DataSheet download, circuit diagram from SeekIC.com

Features: · TrenchFET®Power MOSFET· 100% Rg TestedPinoutSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150)a, b TA = 25 ID 3.5 A TA = 70 2.8 Continuous Source Current (Diode Co...

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SeekIC No. : 004489978 Detail

Si2306DS: Features: · TrenchFET®Power MOSFET· 100% Rg TestedPinoutSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 Continuous Drai...

Si2306DS Data Sheet

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Part Number:: Si2306DS
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
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Upload time: 2024/12/22

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Recent History
What is this?

SI2300 evaluate
Features: VDS=20V,RDS(ON)=40m@VGS=4.5V,ID=5.0AVDS=20V,RDS(ON)=60m@VGS=2.5V,ID=4.0AVDS=20V,,RDS(ON)...
SI2300DS-T1-GE3 evaluate
US $.14 - .29 / Piece

MOSFET 30V 3.6A N-CH MOSFET
SI2301 evaluate
US $.13 - .16 / Piece

MOSFET -20V -2.8A

Product Details

Description

Features:

· TrenchFET^®Power MOSFET
· 100% Rg Tested

Pinout

Connection Diagram

Specifications

Parameter		Symbol	Limit	Unit
Drain-Source Voltage		V_DS	30	V
Gate-Source Voltage		V_GS	±20
Continuous Drain Current (T_J = 150)^{a, b}	T_A= 25	I_D	3.5	A
	T_A= 70		2.8
Continuous Source Current (Diode Conduction)^{a, b}		I_S	1.25
Pulsed Drain Current		I_DM	16
Power Dissipation^a,b	T_A = 25	P_D	1.25	W
	T_A = 70		0.80
Operating Junction and Storage Temperature Range		T_J, T_stg	55 to 150

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Si2306DS

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