SI2300DS-T1-GE3, US $ .14-.29 , Vishay/Siliconix, SI2300DS-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00147970 Detail

SI2300DS-T1-GE3: MOSFET 30V 3.6A N-CH MOSFET

SI2300DS-T1-GE3 Data Sheet

US $ .14~.29 / Piece | Get Latest Price

Part Number:: SI2300DS-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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0~1
1~25
25~100
100~250

Unit Price
$.29
$.2
$.17
$.14

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/11/22

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What is this?

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Features: VDS=20V,RDS(ON)=40m@VGS=4.5V,ID=5.0AVDS=20V,RDS(ON)=60m@VGS=2.5V,ID=4.0AVDS=20V,,RDS(ON)...
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US $.13 - .16 / Piece

MOSFET -20V -2.8A
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PinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage V...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Continuous Drain Current :	3.6 A	Resistance Drain-Source RDS (on) :	0.055 Ohms
Configuration :	Single	Maximum Operating Temperature :	+ 150 C
Mounting Style :	SMD/SMT	Package / Case :	TO-236
Packaging :	Reel

Description

Gate-Source Breakdown Voltage :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 3.6 A
Package / Case : TO-236
Resistance Drain-Source RDS (on) : 0.055 Ohms

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SI2300DS-T1-GE3

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