Si2305CDS-T1-GE3

MOSFET 8.0V 5.8A 1.7W 35mohm @ 4.5V

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Si2305CDS-T1-GE3 Picture
SeekIC No. : 00152165 Detail

Si2305CDS-T1-GE3: MOSFET 8.0V 5.8A 1.7W 35mohm @ 4.5V

floor Price/Ceiling Price

US $ .13~.25 / Piece | Get Latest Price
Part Number:
Si2305CDS-T1-GE3
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.25
  • $.16
  • $.15
  • $.13
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 8 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 4.4 A
Resistance Drain-Source RDS (on) : 35 mOhms at 4.5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23-3 Packaging : Reel    

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Drain-Source Breakdown Voltage : 8 V
Package / Case : SOT-23-3
Continuous Drain Current : 4.4 A
Resistance Drain-Source RDS (on) : 35 mOhms at 4.5 V


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