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SUU50N03-10P

MOSFET 30V 50A

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SeekIC No. : 00161010 Detail

SUU50N03-10P: MOSFET 30V 50A

SUU50N03-10P Data Sheet

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Part Number:
SUU50N03-10P
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 0.007 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 25 A
Package / Case : TO-251
Resistance Drain-Source RDS (on) : 0.007 Ohms


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain Currentd
(TJ = 175)		 TC = 25 ID 20 A
TC = 100 14
Pulsed Drain Current IDM 100
Continuous Source Current (Diode Conduction)   IS 20
Maximum Power Dissipation TC = 25 PD 71b W
TA = 25 8.3a
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175



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