MOSFET 30V 50A
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Features: TrenchFET® Power MOSFETApplicationDC/DC ConvertersSynchronous RectifiersSpecificatio...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 25 A |
Resistance Drain-Source RDS (on) : | 0.007 Ohms | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole |
Package / Case : | TO-251 |
Parameter | Symbol | Limit | Unit | |
Drain-Source Voltage | VDS | 30 | V | |
Gate-Source Voltage | VGS | ±20 | ||
Continuous Drain Current (TJ = 175) | TA = 25 | ID | 25 | A |
TA = 100 | 18 | |||
Pulsed Drain Current | IDM | 100 | ||
Continuous Source Current (Diode Conduction) | IS | 25 | ||
Maximum Power Dissipation | TC = 25 | PD | 88 | W |
TA = 25 | 8.3 | |||
Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 175 |