SUM110N10-09

MOSFET 100V 110A 375W

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SeekIC No. : 00164654 Detail

SUM110N10-09: MOSFET 100V 110A 375W

floor Price/Ceiling Price

Part Number:
SUM110N10-09
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 9.5 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263-3 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Package / Case : TO-263-3
Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 9.5 mOhms


Features:

` TrenchFET®Power MOSFET
200 Junction Temperature
New Package with Low Thermal Resistance
100% Rg Tested



Application

· Automotive
   − 42-V Power Bus
   − DC/DC Conversion
   − Motor Drivers



Specifications

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ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)

Parameter

Symbol Limit Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20
Continuous Drain Current
(TJ = 175)
TC = 25 ID 110a A
TC = 125 87a
Pulsed Drain Current IDM 440
Avalanche Current IAR 75
Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ
Maximum Power Dissipationb TC = 25 PD 437.5c W
TA = 25d 3.75
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 200



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