MOSFET 100V 110A 375W
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Features: `TrenchFET® Power MOSFET` 175 Junction Temperature`Optimized for Low-Side Synchronou...
Features: `TrenchFET®Power MOSFET` 175 Junction Temperature` Low Thermal Resistance Package` H...
Specifications SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test C...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 110 A | ||
Resistance Drain-Source RDS (on) : | 9.5 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263-3 | Packaging : | Reel |
ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED) | ||||
Parameter |
Symbol | Limit | Unit | |
Drain-Source Voltage | VDS | 100 | V | |
Gate-Source Voltage | VGS | ±20 | ||
Continuous Drain Current (TJ = 175) |
TC = 25 | ID | 110a | A |
TC = 125 | 87a | |||
Pulsed Drain Current | IDM | 440 | ||
Avalanche Current | IAR | 75 | ||
Repetitive Avalanche Energyb | L = 0.1 mH | EAR | 280 | mJ |
Maximum Power Dissipationb | TC = 25 | PD | 437.5c | W |
TA = 25d | 3.75 | |||
Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 200 |