Position: Home  > All Categories> Integrated Circuits (ICs) > SUM110N03-03P

SUM110N03-03P

Specifications SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions SimulatedData MeasuredData Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 1.8 V On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 1708 A Drain...

product image

SUM110N03-03P Picture
See larger image
SeekIC No. : 004509285 Detail

SUM110N03-03P: Specifications SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions SimulatedData MeasuredData Unit Static Gate Threshold Voltage VGS(th) VDS = VGS...

SUM110N03-03P Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
SUM110N03-03P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Specifications

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions Simulated
Data		 Measured
Data		 Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 1.8   V
On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 1708   A
Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A 0.0019 0.0022 Ω
VGS = 10 V, ID = 30A, TJ = 125°C 0.0026

 VGS = 4.5V, ID =20A

 0.0030 0.0031
Forward Voltagea VSD IS = 110A, VGS = 0 V 0.93 1.1 V
Dynamicb
Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 11410 12100 pF
Output Capacitance Coss 811 1910
Reverse Transfer Capacitance Crss 489 1250
Total Gate Chargec Qg VDS = 15 V, VGS = 10 V, ID = 110 A 194 172 nC
Gate-Source Chargec Qgs 40 40
Gate-Drain Chargec Qgd 40 22
Turn-On Delay Timec td(on) VDD = 15V, RL = 0.18Ω
ID= 110A, VGEN = 10 V, RG = 2.5 Ω		 19 20 ns
Rise Timec tr 23 20
Turn-Off Delay Timec td(off) 50 90
Fall Timec tf 44 25
Source-Drain Reverse Recovery Time trr IF = 85 A, di/dt = 100 A/µs 31 60



Description

The attached spice model of SUM110N03-03P describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance of SUM110N03-03P is best fit at the gate bias near the threshold voltage.

A novel gate-to-drain feedback capacitance network of SUM110N03-03P is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the SUM110N03-03P.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Memory Cards, Modules
WT32
VTL5C7
Cables, Wires
821-0814-a
415-0100-150
Undefined Category
VI-B63-IU
X27 589
Kits
IT243
UVSC-110-4E1
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
View more