MOSFET P-CH 100V DPAK
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Features: `TrenchFET® Power MOSFET`175 Rated Maximum Junction TemperatureApplication·Automotiv...
Series: | TrenchFET® | Manufacturer: | Vishay Siliconix | ||
FET Type: | MOSFET P-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 15.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Standard | Drain to Source Voltage (Vdss): | 100V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 8.8A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 195 mOhm @ 3.6A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 2.5V @ 250µA | Gate Charge (Qg) @ Vgs: | 34.8nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 1055pF @ 50V | ||
Power - Max: | 2.5W | Mounting Type: | Surface Mount | ||
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 | Supplier Device Package: | TO-252, (D-Pak) |