SUD06N10-225L Selling Leads, Price trend , Vishay/Siliconix, SUD06N10-225L DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00166540 Detail

SUD06N10-225L: MOSFET 100V 6.5A 20W

SUD06N10-225L Data Sheet

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Part Number:: SUD06N10-225L
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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Upload time: 2024/11/22

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Recent History
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SUD06N10-225L-E3 evaluate
US $.54 - .88 / Piece

MOSFET 100V 6.5A 20W
SUD08P06-155L evaluate
Features: `TrenchFET® Power MOSFET`175 Rated Maximum Junction TemperatureApplication·Automotiv...
SUD08P06-155L-E3 evaluate
US $.28 - .47 / Piece

MOSFET 60V 8.4A 25W

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	6.5 A
Resistance Drain-Source RDS (on) :	200 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-252-3	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6.5 A
Package / Case : TO-252-3
Resistance Drain-Source RDS (on) : 200 mOhms

Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter		Symbol	Limit	Unit
Drain-Source Voltage		V_DS	100	V
Gate-Source Voltage		V_GS	±20
Continuous Drain Current (T_J = 175)^b	T_C = 25	I_D	6.5	A
	T_C= 125		3.75
Pulsed Drain Current		I_DM	8.0
Continuous Source Current (Diode Conduction)		I_S	6.5
Avalanche Current		I_AR	5.0
Repetitive Avalanche Energy (Duty Cycle 1%)	L = 0.1 mH	E_AR	1.25	mJ
Maximum Power Dissipation	T_C = 25	P_D	20^b	W
	T_A = 25		1.5^a
Operating Junction and Storage Temperature Range		T_^J, T_^stg	−55 to 175

Description

N-Channel 100-V (D-S) 175C MOSFET SUD06N10-225L

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SUD06N10-225L

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