Application·HIGH CURRENT, HIGH SPEED SWITCHING·SWITCH MODE POWER SUPPLY (SMPS)·DC-AC CONVERTER FOR WELDING EQUIPMENTAND UNINTERRUPTABLE POWERSUPPLY AND MOTOR DRIVESpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain- gate Voltage (RG...
STY34NB50F: Application·HIGH CURRENT, HIGH SPEED SWITCHING·SWITCH MODE POWER SUPPLY (SMPS)·DC-AC CONVERTER FOR WELDING EQUIPMENTAND UNINTERRUPTABLE POWERSUPPLY AND MOTOR DRIVESpecifications Symbol Paramet...
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Symbol | Parameter | Value | Unit |
VDS |
Drain-source Voltage (VGS = 0) |
500 | V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
500 | V |
VGS |
Gate-source Voltage |
±30 | V |
ID |
Drain Current (continuous) at Tc = 25 |
34 | A |
ID |
Drain Current (continuous) at Tc = 100 |
21.4 | A |
IDM(•) |
Drain Current (pulsed) |
136 | A |
PTOT |
Total Dissipation at Tc = 25 |
450 | W |
Derating Factor |
3.61 | W/ | |
dv/dt(1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
Tstg |
Storage Temperature |
-65 to 150 | |
Tj |
Max. Operating Junction Temperature |
150 |
Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics STY34NB50F has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.