STW9NK90Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Continuous Drain Current : 8 A
Drain-Source Breakdown Voltage : 900 V
Resistance Drain-Source RDS (on) : 1300 mOhms


Features:

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.

Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 SWITCH MODE POWER SUPPLIES
 DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE


Specifications

Symbol	Parameter	Value			Unit
		STP9NK90Z	STF9NK90Z	STW9NK90Z
Vds	Drain-source Voltage (VGS = 0)	900			V
VDGR	Drain-gate Voltage (RGS = 20 kW)	900			V
VGE	Gate-Emitter Voltage	±30			V
ID	Collector Current (continuous) at TC = 25°C	8	8 (*)	8	A
ID	Collector Current (continuous) at TC = 100°C	5	5 (*)	5	A
IDM(•)	Collector Current (pulsed)	32	32 (*)	32	A
PTOT	Total Dissipation at TC = 25°C	160	40	160	W
	Derating Factor	1.28	0.32	1.28	W/°C
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5KW)	4			KV
dv/dt (1)	Peak Diode Recovery voltage slope	4.5			V/ns
VISO	Insulation Withstand Voltage (DC)	--	2500	--	V
Tj Tstg	Operating Junction Temperature Storage Temperature	55 to 150 55 to 150			oC

Description

The STW9NK90Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.