STW9NC80Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-247
Continuous Drain Current : 9.4 A
Gate-Source Breakdown Voltage : +/- 25 V
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 0.9 Ohms


Features:

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the 25V Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.

Application

· SINGLE-ENDED SMPS IN MONITORS,COMPUTER AND INDUSTRIAL APPLICATION
· WELDING EQUIPMENT


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	800	V
VDGR	Drain- gate Voltage (RGS = 20 k)	800	V
VGS	Gate-source Voltage	±25	V
ID	Drain Current (continuous) at Tc = 25	9.4	A
ID	Drain Current (continuous) at Tc = 100	5.9	A
IDM(1)	Drain Current (pulsed)	38	A
PTOT	Total Dissipation at Tc = 25	190	W
	Derating Factor	1.52	W/
IGS	Gate-source Current (*)	±50	mA
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=15K)	4	KV
dv/dt(.)	Peak Diode Recovery voltage slope	3	V/ns
VISO	Insulation Winthstand Voltage (DC)	--	V
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

(•)Pulse width limited by safe operating area
(1)I_SD 9.4A, di/dt 100A/µs, V_DD V_(BR)DSS, T_j T_JMAX.


Description

The STW9NC80Z third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.