Application·HIGH CURRENT, HIGH SPEED SWITCHING·SWITCH MODE POWER SUPPLIES(SMPS)·DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVESpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 1000 V VDGR Drain- gate Voltag...
STW6NB100: Application·HIGH CURRENT, HIGH SPEED SWITCHING·SWITCH MODE POWER SUPPLIES(SMPS)·DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVESpecifications Symbol Par...
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Symbol | Parameter | Value | Unit |
VDS |
Drain-source Voltage (VGS = 0) |
1000 | V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
1000 | V |
VGS |
Gate-source Voltage |
±30 | V |
ID |
Drain Current (continuous) at Tc = 25 |
5.4 | A |
ID |
Drain Current (continuous) at Tc = 100 |
3.4 | A |
IDM(•) |
Drain Current (pulsed) |
21 | A |
PTOT |
Total Dissipation at Tc = 25 |
160 | W |
Derating Factor |
1.28 | W/ | |
dv/dt(1) |
Peak Diode Recovery voltage slope |
4 |
V/ns |
Tstg |
Storage Temperature |
-65 to 150 | |
Tj |
Max. Operating Junction Temperature |
150 |
Using the latest high voltage technology,STMicroelectronics STW6NB100 has designed an advanced family of power Mosfets with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.