STW60NE10

MOSFET N-Ch 100 Volt 60 Amp

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SeekIC No. : 00163212 Detail

STW60NE10: MOSFET N-Ch 100 Volt 60 Amp

floor Price/Ceiling Price

Part Number:
STW60NE10
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.022 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-247
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.022 Ohms


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SOLENOID AND RELAY DRIVERS
· MOTOR CONTROL, AUDIO AMPLIFIERS
· DC-DC & DC-AC CONVERTERS
· AUTOMOTIVE ENVIRONMENT (INJECTION,ABS, AIR-BAG, LAMPDRIVERS, Etc.)



Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

100 V
VDGR

Drain- gate Voltage (RGS = 20 k)

100 V
VGS

Gate-source Voltage

±20 V
ID

Drain Current (continuous) at Tc = 25

60 A
ID

Drain Current (continuous) at Tc = 100

42 A
IDM(.)

Drain Current (pulsed)

240 A
PTOT

Total Dissipation at Tc = 25

180 W

Derating Factor

1.2 W/

dv/dt(1)

Peak Diode Recovery voltage slope

9

V/ns

Tstg

Storage Temperature

-65 to 175
Tj

Max. Operating Junction Temperature

175
(•)Pulse width limited by safe operating area
(1)ISD 60, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.



Description

This Power MOSFET STW60NE10 is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTW60NE10
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs22 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 5300pF @ 25V
Power - Max180W
PackagingTube
Gate Charge (Qg) @ Vgs185nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names STW60NE10
STW60NE10
497 2643 5 ND
49726435ND
497-2643-5



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