STW60NE10

MOSFET N-Ch 100 Volt 60 Amp

product image

STW60NE10 Picture
SeekIC No. : 00163212 Detail

STW60NE10: MOSFET N-Ch 100 Volt 60 Amp

floor Price/Ceiling Price

Part Number:
STW60NE10
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/7

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.022 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-247
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.022 Ohms


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SOLENOID AND RELAY DRIVERS
· MOTOR CONTROL, AUDIO AMPLIFIERS
· DC-DC & DC-AC CONVERTERS
· AUTOMOTIVE ENVIRONMENT (INJECTION,ABS, AIR-BAG, LAMPDRIVERS, Etc.)



Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

100 V
VDGR

Drain- gate Voltage (RGS = 20 k)

100 V
VGS

Gate-source Voltage

±20 V
ID

Drain Current (continuous) at Tc = 25

60 A
ID

Drain Current (continuous) at Tc = 100

42 A
IDM(.)

Drain Current (pulsed)

240 A
PTOT

Total Dissipation at Tc = 25

180 W

Derating Factor

1.2 W/

dv/dt(1)

Peak Diode Recovery voltage slope

9

V/ns

Tstg

Storage Temperature

-65 to 175
Tj

Max. Operating Junction Temperature

175
(•)Pulse width limited by safe operating area
(1)ISD 60, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.



Description

This Power MOSFET STW60NE10 is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTW60NE10
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs22 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 5300pF @ 25V
Power - Max180W
PackagingTube
Gate Charge (Qg) @ Vgs185nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names STW60NE10
STW60NE10
497 2643 5 ND
49726435ND
497-2643-5



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Power Supplies - Board Mount
Optical Inspection Equipment
Industrial Controls, Meters
Discrete Semiconductor Products
Tapes, Adhesives
803
View more