MOSFET N-Ch 100 Volt 60 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 60 A | ||
Resistance Drain-Source RDS (on) : | 0.022 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247 | Packaging : | Tube |
Symbol | Parameter | Value | Unit |
VDS |
Drain-source Voltage (VGS = 0) |
100 | V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
100 | V |
VGS |
Gate-source Voltage |
±20 | V |
ID |
Drain Current (continuous) at Tc = 25 |
60 | A |
ID |
Drain Current (continuous) at Tc = 100 |
42 | A |
IDM(.) |
Drain Current (pulsed) |
240 | A |
PTOT |
Total Dissipation at Tc = 25 |
180 | W |
Derating Factor |
1.2 | W/ | |
dv/dt(1) |
Peak Diode Recovery voltage slope |
9 |
V/ns |
Tstg |
Storage Temperature |
-65 to 175 | |
Tj |
Max. Operating Junction Temperature |
175 |
This Power MOSFET STW60NE10 is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Technical/Catalog Information | STW60NE10 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 60A |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 30A, 10V |
Input Capacitance (Ciss) @ Vds | 5300pF @ 25V |
Power - Max | 180W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 185nC @ 10V |
Package / Case | TO-247-3 |
FET Feature | Standard |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | STW60NE10 STW60NE10 497 2643 5 ND 49726435ND 497-2643-5 |