STW30NM60D

MOSFET N-Ch 600 Volt 30 Amp

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SeekIC No. : 00161910 Detail

STW30NM60D: MOSFET N-Ch 600 Volt 30 Amp

floor Price/Ceiling Price

Part Number:
STW30NM60D
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.145 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 30 A
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.145 Ohms


Features:

· TYPICAL RDS(on) = 0.125 Ω
· HIGH dv/dt AND AVALANCHE CAPABILITIES
· 100% AVALANCHE RATED
· LOW INPUT CAPACITANCE AND GATE CHARGE
· LOW GATE INPUT RESISTANCE
· FAST INTERNAL RECOVERY DIODE



Application

· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT




Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

600 V
VDGR

Drain- gate Voltage (RGS = 20 k)

600 V
VGS

Gate-source Voltage

±30 V
ID

Drain Current (continuous) at Tc = 25

30 A
ID

Drain Current (continuous) at Tc = 100

18.9 A

IDM(.)

Drain Current (pulsed)

120 A
PTOT

Total Dissipation at Tc = 25

312 W

Derating Factor

2.5 W/

dv/dt(1)

Peak Diode Recovery voltage slope

20

V/ns

Tj
Tstg

Operating Junction Temperature
Storage Temperature

-55 to 150
-55 to 150


(. ) Pulse width limited by safe operating area
(1) ISD 30A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX.



Description

The FDmesh™ associates STW30NM60D all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.




Parameters:

Technical/Catalog InformationSTW30NM60D
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs145 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 2520pF @ 25V
Power - Max312W
PackagingTube
Gate Charge (Qg) @ Vgs115nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STW30NM60D
STW30NM60D
497 4426 5 ND
49744265ND
497-4426-5



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