MOSFET N-Ch 600 Volt 30 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 30 A | ||
Resistance Drain-Source RDS (on) : | 0.145 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247 | Packaging : | Tube |
· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT
Symbol | Parameter | Value | Unit |
VDS |
Drain-source Voltage (VGS = 0) |
600 | V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
600 | V |
VGS |
Gate-source Voltage |
±30 | V |
ID |
Drain Current (continuous) at Tc = 25 |
30 | A |
ID |
Drain Current (continuous) at Tc = 100 |
18.9 | A |
IDM(.) |
Drain Current (pulsed) |
120 | A |
PTOT |
Total Dissipation at Tc = 25 |
312 | W |
Derating Factor |
2.5 | W/ | |
dv/dt(1) |
Peak Diode Recovery voltage slope |
20 |
V/ns |
Tj Tstg |
Operating Junction Temperature |
-55 to 150 -55 to 150 |
The FDmesh™ associates STW30NM60D all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
Technical/Catalog Information | STW30NM60D |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 30A |
Rds On (Max) @ Id, Vgs | 145 mOhm @ 15A, 10V |
Input Capacitance (Ciss) @ Vds | 2520pF @ 25V |
Power - Max | 312W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 115nC @ 10V |
Package / Case | TO-247-3 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STW30NM60D STW30NM60D 497 4426 5 ND 49744265ND 497-4426-5 |