STW30N20 Selling Leads, Price trend , STMicroelectronics, STW30N20 DataSheet download, circuit diagram from SeekIC.com

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STW30N20: MOSFET STripFET Power MOSFET

STW30N20 Data Sheet

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Part Number:: STW30N20
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Upload time: 2024/11/4

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	30 A
Resistance Drain-Source RDS (on) :	0.065 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 30 A
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.065 Ohms

Parameters:

Technical/Catalog Information	STW30N20
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	75 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	1597pF @ 25V
Power - Max	125W
Packaging	Tube
Gate Charge (Qg) @ Vgs	38nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW30N20 STW30N20 497 5168 5 ND 49751685ND 497-5168-5

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STW30N20

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