STW24NM65N

MOSFET N-channel 650V

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SeekIC No. : 00162297 Detail

STW24NM65N: MOSFET N-channel 650V

floor Price/Ceiling Price

Part Number:
STW24NM65N
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.19 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.19 Ohms
Package / Case : TO-247
Continuous Drain Current : 19 A
Gate-Source Breakdown Voltage : +/- 25 V


Parameters:

Technical/Catalog InformationSTW24NM65N
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C19A
Rds On (Max) @ Id, Vgs190 mOhm @ 9.5A, 10V
Input Capacitance (Ciss) @ Vds 2500pF @ 50V
Power - Max160W
PackagingTube
Gate Charge (Qg) @ Vgs70nC @ 10V
Package / CaseTO-247-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STW24NM65N
STW24NM65N
497 7035 5 ND
49770355ND
497-7035-5



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