Transistors Bipolar (BJT) N-Ch 30 Volt 120 Amp
STW200NF03: Transistors Bipolar (BJT) N-Ch 30 Volt 120 Amp
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Transistor Polarity : | NPN | Configuration : | Single |
Mounting Style : | Through Hole | Package / Case : | TO-247-3 |
Packaging : | Tube |
Symbol | Parameter | Value | Unit |
VDS |
Drain-source Voltage (VGS = 0) |
30 | V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 | V |
VGS |
Gate-source Voltage |
±20 | V |
ID(`) |
Drain Current (continuous) at Tc = 25 |
120 | A |
ID |
Drain Current (continuous) at Tc = 100 |
120 | A |
IDM(``) |
Drain Current (pulsed) |
480 | A |
Ptot |
Total Dissipation at Tc = 25 |
350 | W |
Derating Factor |
2.33 | W/ | |
dv/dt (1) |
Peak Diode Recovery voltage slope |
1.5 |
V/ns |
EAS (2) |
Single Pulse Avalanche Energy |
4 |
J |
Tstg |
Storage Temperature |
-55 to 175 | |
Tj |
Max. Operating Junction Temperature |
This Power MOSFET STW200NF03 series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.STW200NF03 is particularly suitable in OR-ing function circuits and synchronous rectification.
Technical/Catalog Information | STW200NF03 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 120A |
Rds On (Max) @ Id, Vgs | 2.8 mOhm @ 60A, 10V |
Input Capacitance (Ciss) @ Vds | 10000pF @ 25V |
Power - Max | 350W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 280nC @ 10V |
Package / Case | TO-247-3 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STW200NF03 STW200NF03 |