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STW21NM60N: MOSFET N-Ch 600 V 0.18 Ohm 16 A 2nd Gen MDmesh

STW21NM60N Data Sheet

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Part Number:: STW21NM60N
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Upload time: 2024/11/4

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 25 V	Continuous Drain Current :	17 A
Resistance Drain-Source RDS (on) :	0.19 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 0.19 Ohms
Package / Case : TO-247
Gate-Source Breakdown Voltage : +/- 25 V

Parameters:

Technical/Catalog Information	STW21NM60N
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	17A
Rds On (Max) @ Id, Vgs	220 mOhm @ 8.5A, 10V
Input Capacitance (Ciss) @ Vds	1900pF @ 50V
Power - Max	140W
Packaging	Tube
Gate Charge (Qg) @ Vgs	66nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW21NM60N STW21NM60N 497 5024 5 ND 49750245ND 497-5024-5

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STW21NM60N

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