STW20NM50

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.25 Ohms


Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	500	V
VDGR	Drain- gate Voltage (RGS = 20 k)	500	V
VGS	Gate-Source Voltage	± 30	V
ID	Drain Current (continuous) at Tc = 25	20	A
ID	Drain Current (continuous) at Tc = 100	12.6	A
IDM(`)	Drain Current (pulsed)	80	A
PTOT	Total Dissipation at Tc = 25	214	W
	Derating Factor	1.44	W/
dv/dt(1)	Peak Diode Recovery voltage slope	15	V/ns
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

(`) Pulse width limited by safe operating area (1) I_SD 14 A, di/dt 200 A/s, V_DD V_(BR)DSS, T_j T_JMAX

Description

The MDmesh™ STW20NM50 is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.

The STW20NM50 is a kind of N-channel MDmesh™ power MOSFET. The MDmesh™ is a revolutionary MOSFET technology integrating the Multiple Drain process with the PowerMESH™ horizontal layout. It is designed for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

There are some features of STW20NM50 as follows: (1) typical RDS(on)=0.20; (2) high dv/dt and avalanche capabilities; (3) 100% avalanche tested; (4) low input capacitance and gate charge; (5) low gate input resistance; (6) tight process control and high manufacturing yields.

What comes next is about the absolute maximum ratings of STW20NM50. (1): VDS (drain-source voltage (VGS=0)) is 500 V; (2): VDGR (drain-gate voltage (RGS=20 k)) is 500 V; (3): VGS (gate-source voltage) is ±30 V; (4): ID (drain current (continuous) at TC=25) is 20 A; (5): ID (drain current (continuous) at TC=100) is 12.6 A; (6): IDM (drain current (pulsed)) is 80 A; (7): PTOT (total dissipation at TC=25) is 214 W; (8): dv/dt (peak diode recovery voltage slope) is 15 V/ns; (9): Tstg (storage temperature range) is from -65 to 150; (10): Tj (maximum operating junction temperature) is 150.

Parameters:

Technical/Catalog Information	STW20NM50
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	550V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	250 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	1480pF @ 25V
Power - Max	214W
Packaging	Tube
Gate Charge (Qg) @ Vgs	56nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW20NM50 STW20NM50 497 3262 5 ND 49732625ND 497-3262-5