STW20NK70Z

MOSFET N-Ch 700 Volt 20 Amp

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SeekIC No. : 00160724 Detail

STW20NK70Z: MOSFET N-Ch 700 Volt 20 Amp

floor Price/Ceiling Price

Part Number:
STW20NK70Z
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 700 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.285 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 700 V
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.285 Ohms


Features:

` TYPICAL RDS(on) = 0.25
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITY



Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES



Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
700
V
VDGR
Drain-gate Voltage (RGS = 20 k)
700
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC = 25
20
A
ID
Drain Current (continuos) at TC = 100
12
A
IDM (`)
Drain Current (pulsed)
80
A
Ptot
Total Dissipation at TC = 25
300
W
Derating Factor
2.4
W/
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K)
TBD
V
dv/dt (1)
Peak Diode Recovery voltage slope
TBD
V/ns
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150

(`) Pulse width limited by safe operating area
(1) ISD 17A, di/dt TBDA/µs, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed


Description

The SuperMESH™ series STW20NK70Z is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




Parameters:

Technical/Catalog InformationSTW20NK70Z
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)700V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs285 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 6000pF @ 25V
Power - Max350W
PackagingTube
Gate Charge (Qg) @ Vgs185nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STW20NK70Z
STW20NK70Z
497 3559 5 ND
49735595ND
497-3559-5



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