MOSFET N-Ch 700 Volt 20 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 700 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 20 A | ||
Resistance Drain-Source RDS (on) : | 0.285 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247 | Packaging : | Tube |
Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
700 |
V |
VDGR |
Drain-gate Voltage (RGS = 20 k) |
700 |
V |
VGS |
Gate- source Voltage |
±30 |
V |
ID |
Drain Current (continuos) at TC = 25 |
20 |
A |
ID |
Drain Current (continuos) at TC = 100 |
12 |
A |
IDM (`) |
Drain Current (pulsed) |
80 |
A |
Ptot |
Total Dissipation at TC = 25 |
300 |
W |
Derating Factor |
2.4 |
W/ | |
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5K) |
TBD |
V |
dv/dt (1) |
Peak Diode Recovery voltage slope |
TBD |
V/ns |
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 |
The SuperMESH™ series STW20NK70Z is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Technical/Catalog Information | STW20NK70Z |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 700V |
Current - Continuous Drain (Id) @ 25° C | 20A |
Rds On (Max) @ Id, Vgs | 285 mOhm @ 10A, 10V |
Input Capacitance (Ciss) @ Vds | 6000pF @ 25V |
Power - Max | 350W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 185nC @ 10V |
Package / Case | TO-247-3 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STW20NK70Z STW20NK70Z 497 3559 5 ND 49735595ND 497-3559-5 |