STW20NK50Z

MOSFET N-Ch 500 Volt 17 Amp Zener SuperMESH

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SeekIC No. : 00148038 Detail

STW20NK50Z: MOSFET N-Ch 500 Volt 17 Amp Zener SuperMESH

floor Price/Ceiling Price

US $ 1.25~1.87 / Piece | Get Latest Price
Part Number:
STW20NK50Z
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.87
  • $1.57
  • $1.4
  • $1.25
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 270 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 17 A
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 270 mOhms


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC



Specifications

Symbol
Parameter
Value
Unit
STP10NK80Z
STP10NK80ZFP
VDS
Drain-source Voltage (VGS = 0)
500
V
VDGR
Drain- gate Voltage (RGS = 20 k)
500
V
VGS
Gate-Source Voltage
± 30
V
ID
Drain Current (continuous) at Tc = 25
20
20 (*)
A
ID

Drain Current (continuous) at Tc = 100
10
10 (*)
A
IDM(`)
Drain Current (pulsed)
64
64 (*)
A
PTOT
Total Dissipation at Tc = 25
190
190
W
Derating Factor
1.51
1.51
W/
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
VISO
Insulation Withstand Voltage (DC)
2500
V
Tstg
Storage Temperature
-55 to 150

Tj Operating Junction Temperature
-55 to 150
(•)Pulse width limited by safe operating area (1)ISD0.3A, di/dt100A/µs, VDD0V(BR)DSS, Tj0 TJMAX
(*) Limited only by maximum temperature allowed


Description

The SuperMESH™ series STW20NK50Z is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




Parameters:

Technical/Catalog InformationSTW20NK50Z
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs270 mOhm @ 8.5A, 10V
Input Capacitance (Ciss) @ Vds 2600pF @ 25V
Power - Max190W
PackagingTube
Gate Charge (Qg) @ Vgs119nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STW20NK50Z
STW20NK50Z
497 3261 5 ND
49732615ND
497-3261-5



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