Features: TYPICAL RDS(on) = 0.005 EXCEPTIONAL dv/dt CAPABILITY100% AVALANCHE TESTED LOW GATE CHARGE 100 APPLICATIONORIENTED CHARACTERIZATIONApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIFIERSDC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT (I...
STV80NE03L-06: Features: TYPICAL RDS(on) = 0.005 EXCEPTIONAL dv/dt CAPABILITY100% AVALANCHE TESTED LOW GATE CHARGE 100 APPLICATIONORIENTED CHARACTERIZATIONApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AN...
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Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
VGS |
Gate-source Voltage |
±20 |
V |
ID |
Drain Current (continuous) at Tc = 25 |
80 |
A |
ID |
Drain Current (continuous) at Tc = 100 |
60 |
A |
IDM(`) |
Drain Current (pulsed) |
320 |
A |
Ptot |
Total Dissipation at Tc = 25 |
150 |
W |
Derating Factor |
1 |
W/ | |
dv/dt(1) |
Peak Diode Recovery voltage slope |
7 |
V/ns |
Tstg |
Storage Temperature |
-65 to 175 |
°C |
Tj |
Max. Operating Junction Temperature |
175 |
°C |
This Power Mosfet STV80NE03L-06 is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.