STV80NE03L-06 Selling Leads, Price trend, STV80NE03L-06 DataSheet download, circuit diagram from SeekIC.com

Features: TYPICAL RDS(on) = 0.005 EXCEPTIONAL dv/dt CAPABILITY100% AVALANCHE TESTED LOW GATE CHARGE 100 APPLICATIONORIENTED CHARACTERIZATIONApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIFIERSDC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT (I...

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STV80NE03L-06: Features: TYPICAL RDS(on) = 0.005 EXCEPTIONAL dv/dt CAPABILITY100% AVALANCHE TESTED LOW GATE CHARGE 100 APPLICATIONORIENTED CHARACTERIZATIONApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AN...

STV80NE03L-06 Data Sheet

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Part Number:: STV80NE03L-06
Supply Ability:: 5000

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1~5000

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Upload time: 2024/12/25

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Features: · Input Voltage Range: 5 V to 18 V· Output Currents up to 750 mA· Fixed Precision Output...
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Features: · Input Voltage Range: 5 V to 18 V· Output Currents up to 750 mA· Fixed Precision Output...

Product Details

Description

Features:

TYPICAL R_DS(on) = 0.005
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100
APPLICATIONORIENTED CHARACTERIZATION

Application

HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc. )

Specifications

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	30	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	30	V
V_GS	Gate-source Voltage	±20	V
ID	Drain Current (continuous) at T_c= 25	80	A
I_D	Drain Current (continuous) at T_c = 100	60	A
I_DM(`)	Drain Current (pulsed)	320	A
P_tot	Total Dissipation at T_c= 25	150	W
	Derating Factor	1	W/
dv/dt(1)	Peak Diode Recovery voltage slope	7	V/ns
T_stg	Storage Temperature	-65 to 175	°C
T_j	Max. Operating Junction Temperature	175	°C

(•) Pulse width limited by safe operating area ( 1) I_SD 80 A, di/dt 300 A/ms, V_DD V_(BR)DSS, T_j T_JMAX

Description

This Power Mosfet STV80NE03L-06 is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

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STV80NE03L-06

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