STV80NE03L-06

Features: TYPICAL RDS(on) = 0.005 EXCEPTIONAL dv/dt CAPABILITY100% AVALANCHE TESTED LOW GATE CHARGE 100 APPLICATIONORIENTED CHARACTERIZATIONApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIFIERSDC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT (I...

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SeekIC No. : 004509065 Detail

STV80NE03L-06: Features: TYPICAL RDS(on) = 0.005 EXCEPTIONAL dv/dt CAPABILITY100% AVALANCHE TESTED LOW GATE CHARGE 100 APPLICATIONORIENTED CHARACTERIZATIONApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AN...

floor Price/Ceiling Price

Part Number:
STV80NE03L-06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.005
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100
APPLICATIONORIENTED CHARACTERIZATION



Application

 HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc. )



Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain- gate Voltage (RGS = 20 k)
30
V
VGS
Gate-source Voltage
±20
V
ID
Drain Current (continuous) at Tc = 25
80
A
ID
Drain Current (continuous) at Tc = 100
60
A
IDM(`)
Drain Current (pulsed)
320
A
Ptot
Total Dissipation at Tc = 25
150
W
Derating Factor
1
W/
dv/dt(1)
Peak Diode Recovery voltage slope
7
V/ns
Tstg
Storage Temperature
-65 to 175
°C
Tj
Max. Operating Junction Temperature
175
°C
(•) Pulse width limited by safe operating area ( 1) ISD 80 A, di/dt 300 A/ms, VDD V(BR)DSS, Tj TJMAX


Description

This Power Mosfet STV80NE03L-06 is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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