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STU9NC80ZI

Features: ` TYPICAL RDS(on) = 0.82` EXTREMELY HIGH dv/dt CAPABILITY`GATE-TO-SOURCE ZENER DIODES`100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZEDApplication· SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION· WELDING EQUIPMENTSpecifications Symbo...

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STU9NC80ZI: Features: ` TYPICAL RDS(on) = 0.82` EXTREMELY HIGH dv/dt CAPABILITY`GATE-TO-SOURCE ZENER DIODES`100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZEDApplication· SINGLE-ENDED...

STU9NC80ZI Data Sheet

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Part Number:
STU9NC80ZI
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Product Details

Description



Features:

` TYPICAL RDS(on) = 0.82
` EXTREMELY HIGH dv/dt CAPABILITY
`GATE-TO-SOURCE ZENER DIODES
`100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED


Application

· SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
· WELDING EQUIPMENT


Specifications

Symbol
 Parameter
Value
Unit
  
STU9NC80Z
STU9NC80ZI
VDS
 Drain-source Voltage (VGS = 0)
800
V
VDGR
 Drain-gate Voltage (RGS = 20 k)
800
V
VGS
 Gate- source Voltage
±25
V
ID
 Drain Current (continuos) at TC = 25°C
8.6
8.6(*)
A
ID
 Drain Current (continuos) at TC = 100°C
5.4
5.4(*)
A
IDM (1)
 Drain Current (pulsed)
34.4
34.4(*)
A
PTOT
 Total Dissipation at TC = 25°C
160
55
W
 Derating Factor
1.28
0.44
W/°C
IGS
 Gate-source Current
±50
mA
VESD(G-S)
 Gate source ESD(HBM-C=100pF, R=15K)
4
KV
dv/dt(`)
 Peak Diode Recovery voltage slope
3
V/ns
VISO
 Insulation Winthstand Voltage (DC)
-
2000
V
Tstg
 Storage Temperature
65 to 150
°C
Tj
 Max. Operating Junction Temperature
150
°C
(•)Pulse width limited by safe operating area
(1)ISD 8.6A, di/dt 100A/s, VDD V(BR)DSS, TjTJMAX
(*)Limited only by maximum temperature allowed


Description

The STU9NC80ZI third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.




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