MOSFET N-Ch, 25V-0.0038ohms 80A
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
Gate-Source Breakdown Voltage : | +/- 22 V | Continuous Drain Current : | 80 A | ||
Resistance Drain-Source RDS (on) : | 0.0049 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source voltage (VGS=0) |
25 |
V |
VGS |
Gate-Source voltage |
±20 |
V |
ID (1) |
Drain current (continuous) at TC = 25°C |
80 |
A |
ID |
Drain current (continuous) at TC = 100°C |
67 |
A |
IDM (2) |
Drain current (pulsed) |
320 |
A |
PTOT |
Total dissipation at TC = 25°C |
70 |
W |
Derating factor |
0.47 |
W/°C | |
EAS (3) |
Single pulse avalanche energy |
165 |
mJ |
Tj Tstg |
Operating junction temperature Storage temperature |
-55 to 175 |
°C |
This STU95N2LH5 utilizes the 5th generation of design rules of ST's proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in the standard packages, makes this STU95N2LH5 suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.
Technical/Catalog Information | STU95N2LH5 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25° C | 80A |
Rds On (Max) @ Id, Vgs | 4.9 mOhm @ 40A, 10V |
Input Capacitance (Ciss) @ Vds | 1817pF @ 25V |
Power - Max | 70W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 13.4nC @ 5V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STU95N2LH5 STU95N2LH5 |