STU95N2LH5

MOSFET N-Ch, 25V-0.0038ohms 80A

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SeekIC No. : 00155574 Detail

STU95N2LH5: MOSFET N-Ch, 25V-0.0038ohms 80A

floor Price/Ceiling Price

US $ .39~.42 / Piece | Get Latest Price
Part Number:
STU95N2LH5
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~2250
  • 2250~5000
  • 5000~10000
  • Unit Price
  • $.42
  • $.4
  • $.39
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 22 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0049 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.0049 Ohms
Gate-Source Breakdown Voltage : +/- 22 V


Features:

RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
High avalanche ruggedness
Low gate drive power losses



Application

Switching applications


Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS=0)
25
V
VGS
Gate-Source voltage
±20
V
ID (1)
Drain current (continuous) at TC = 25°C
80
A
ID
Drain current (continuous) at TC = 100°C
67
A
IDM (2)
Drain current (pulsed)
320
A
PTOT
Total dissipation at TC = 25°C
70
W
Derating factor
0.47
W/°C
EAS (3)
Single pulse avalanche energy
165
mJ
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 175
°C
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj = 25°C, Id = 40 A, Vdd = 20 V



Description

This STU95N2LH5 utilizes the 5th generation of design rules of ST's proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in the standard packages, makes this STU95N2LH5 suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.




Parameters:

Technical/Catalog InformationSTU95N2LH5
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs4.9 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 1817pF @ 25V
Power - Max70W
PackagingTube
Gate Charge (Qg) @ Vgs13.4nC @ 5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STU95N2LH5
STU95N2LH5



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