STSJ25NF3LL

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : PowerPAK SO-8
Gate-Source Breakdown Voltage : +/- 16 V
Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 0.0105 Ohms


Application

SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCs


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-Source Voltage	± 16	V
ID	Drain Current (continuous) at TC = 25°C (*) Drain Current (continuous) at TA = 25°C (#) Drain Current (continuous) at TC = 100°C	25 12 16	A A A
IDM(`)	Drain Current (pulsed)	100	A
PTOT	Total Dissipation at TC = 25°C Total Dissipation at TA = 25°C (#)	70 3	W W

(*)Value limited by wires bonding                                     (l) Pulse width limited by safe operating area


Description

This Power MOSFET STSJ25NF3LL is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. This silicon, housed in thermally improved SO-8 package, exhibits optimal on-resistance versus gate charge trade-off plus lower Rthj-c.

Parameters:

Technical/Catalog Information	STSJ25NF3LL
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	25A
Rds On (Max) @ Id, Vgs	10.5 mOhm @ 12.5A, 10V
Input Capacitance (Ciss) @ Vds	1650pF @ 25V
Power - Max	70W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	33nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STSJ25NF3LL STSJ25NF3LL