Features: TYPICAL RDS(on) = 0.016 Ω @ 10V TYPICAL Qg = 12.5 nC @ 4.5 V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED IMPROVED JUNCTION-CASE THERMAL RESISTANCEApplicationSPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCSPinoutSpecifications ...
STSJ18NF3LL: Features: TYPICAL RDS(on) = 0.016 Ω @ 10V TYPICAL Qg = 12.5 nC @ 4.5 V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED IMPROVED JUNCTION-CASE THERMAL RESISTANCEApplicationSPECIFICALLY DESI...
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TYPICAL RDS(on) = 0.016 Ω @ 10V
TYPICAL Qg = 12.5 nC @ 4.5 V
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
IMPROVED JUNCTION-CASE THERMAL RESISTANCE
Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
VGS |
Gate-Source Voltage |
± 16 |
V |
ID |
Drain Current (continuous) at Tc = 25 (*) |
18 |
A |
ID |
Drain Current (continuous) at Tc = 100 (*) |
18 |
A |
IDM(`) |
Drain Current (pulsed) |
72 |
A |
PTOT |
Total Dissipation at TC = 25°C Total Dissipation at TC = 25°C (#) |
70 3 |
W |
This Power MOSFET STSJ18NF3LL is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. This silicon, housed in thermally improved SO-8™ package, exhibits optimal on-resistance versus gate charge tradeoff plus lower Rthj-c.