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STSJ18NF3LL

Features: TYPICAL RDS(on) = 0.016 Ω @ 10V TYPICAL Qg = 12.5 nC @ 4.5 V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED IMPROVED JUNCTION-CASE THERMAL RESISTANCEApplicationSPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCSPinoutSpecifications ...

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SeekIC No. : 004508811 Detail

STSJ18NF3LL: Features: TYPICAL RDS(on) = 0.016 Ω @ 10V TYPICAL Qg = 12.5 nC @ 4.5 V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED IMPROVED JUNCTION-CASE THERMAL RESISTANCEApplicationSPECIFICALLY DESI...

STSJ18NF3LL Data Sheet

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Part Number:
STSJ18NF3LL
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

TYPICAL RDS(on) = 0.016 Ω @ 10V
TYPICAL Qg = 12.5 nC @ 4.5 V
CONDUCTION LOSSES REDUCED
 SWITCHING LOSSES REDUCED
IMPROVED JUNCTION-CASE THERMAL RESISTANCE




Application

SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCS


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain- gate Voltage (RGS = 20 k)
30
V
VGS
Gate-Source Voltage
± 16
V
ID
Drain Current (continuous) at Tc = 25 (*)
18
A
ID

Drain Current (continuous) at Tc = 100 (*)
18
A
IDM(`)
Drain Current (pulsed)
72
A
PTOT
Total Dissipation at TC = 25°C
Total Dissipation at TC = 25°C (#)
70
3

W
W

(•)Pulse width limited by safe operating area                              (*) Value limited by wires bonding


Description

This Power MOSFET STSJ18NF3LL is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. This silicon, housed in thermally improved SO-8™ package, exhibits optimal on-resistance versus gate charge tradeoff plus lower Rthj-c.




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