STS5NS150

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Package / Case : SO-8
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 0.1 Ohms


Application

·HIGH-EFFICIENCY DC-DC CONVERTERS
·UPS AND MOTOR CONTROL


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	150	V
VDGR	Drain- gate Voltage (RGS = 20 kΏ)	150	V
VGS	Gate-Source Voltage	±20	V
ID	Drain Current (continuous) at Tc = 25	5	A
ID	Drain Current (continuous) at Tc = 100	3	A
IDM(`)	Drain Current (pulsed)	20	A
PTOT	Total Dissipation at Tc = 25	2.5	W
	Derating Factor	0.02	W/
Tstg	Storage Temperature	-55 to 150
Tj	Max. Operating Junction Temperature	-55 to 150

(•)Pulse width limited by safe operating area


Description

This MOSFET series STS5NS150 realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. STS5NS150 is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. STS5NS150 is also intended for any applications with low gate drive requirements.