STS5DNE30L

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 0.045 Ohms


Application




Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current (continuous) at Tc = 25 Single Operation	5	A
ID	Drain Current (continuous) at Tc = 100 Single Operation	3.1	A
IDM(`)	Drain Current (pulsed)	20	A
PTOT	Total Dissipation at TC = 25°C Dual OperationTotal Dissipation at TC = 25°C Single Operation	2 1.6	W W

(`) Pulse width limited by safe operating area.


Description

This Power MOSFET STS5DNE30L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.