STS5NF60L

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 0.055 Ohms


Application




Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	60	V
VDGR	Drain- gate Voltage (RGS = 20 k)	60	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current (continuous) at Tc = 25	5	A
ID	Drain Current (continuous) at Tc = 100	3	A
IDM(`)	Drain Current (pulsed)	20	A
PTOT	Total Dissipation at Tc = 25	2.5	W

(`) Pulse width limited by safe operating area


Description

This Power MOSFET STS5NF60L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parameters:

Technical/Catalog Information	STS5NF60L
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	5A
Rds On (Max) @ Id, Vgs	55 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds	1250pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS5NF60L STS5NF60L 497 8044 2 ND 49780442ND 497-8044-2