STS5N150

Application

 HIGH-EFFICIENCY DC-DC CONVERTERS
 UPS AND MOTOR CONTROL


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	150	V
VDGR	Drain-gate Voltage (RGS = 20 kW)	150	V
VGS	Gate- source Voltage	± 20	V
ID	Drain Current (continuous) at TC = 25°C	5	A
ID	Drain Current (continuous) at TC = 100°C	3	A
IDM(`)	Drain Current (pulsed)	20	A
Ptot	Total Dissipation at TC = 25°C	2.5	W
Tstg	Storage Temperature	-55 to 150
Tj	Operating Junction Temperature

Description

This MOSFET series STS5N150  realized with STMicroelectronicsunique STripFET process has specifically been designed to minimize input capacitance and gate charge. STS5N150  istherefore suitable as primary switch in advanced highefficiency,high-frequency isolated DC-DC converters forTelecom and Computer applications.STS5N150 is also intendedfor any applications with low gate drive requirements.