Position: Home  > All Categories> Integrated Circuits (ICs) > STQ1NC60R

STQ1NC60R

ApplicationLOW SWITCH MODE POWER SUPPLIES (SMPS)BATTERY CHARGERSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0)at Tc = 100 600 V VDGR Drain- gate Voltage (RGS = 20 k)at Tc = 100 600 V VGS Gate-Source Voltage ± 30 V ID Drain Current (cont...

product image

STQ1NC60R Picture
See larger image
SeekIC No. : 004508665 Detail

STQ1NC60R: ApplicationLOW SWITCH MODE POWER SUPPLIES (SMPS)BATTERY CHARGERSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0)at Tc = 100 600 V VDGR Drain- gate Volt...

STQ1NC60R Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STQ1NC60R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Application

LOW SWITCH MODE POWER SUPPLIES (SMPS)
BATTERY CHARGER


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0)at Tc = 100 600 V
VDGR Drain- gate Voltage (RGS = 20 k)at Tc = 100 600 V
VGS Gate-Source Voltage ± 30 V
ID Drain Current (continuous) at Tc = 25 0.3 A
ID
Drain Current (continuous) at Tc = 100 		0.19 A
IDM(`) Drain Current (pulsed) 1.2 A
Ptot Total Dissipation at Tc = 25 3.1 W
Derating Factor 0.025 W/
dv/dt(1) Peak Diode Recovery voltage slope 3 V/ns
Tstg Operating Junction Temperature
Storage Temperature		 -65 to 150
Tj -65 to 150
(`) Pulse width limited by safe operating area (1) ISD 14 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX


Description

Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics STQ1NC60R has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Prototyping Products
AVT4168
DE1
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Filters
PICO2205A
PICO2204A
Undefined Category
VI-B63-IU
X27 589
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
View more