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STQ1NC60R

ApplicationLOW SWITCH MODE POWER SUPPLIES (SMPS)BATTERY CHARGERSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0)at Tc = 100 600 V VDGR Drain- gate Voltage (RGS = 20 k)at Tc = 100 600 V VGS Gate-Source Voltage ± 30 V ID Drain Current (cont...

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SeekIC No. : 004508665 Detail

STQ1NC60R: ApplicationLOW SWITCH MODE POWER SUPPLIES (SMPS)BATTERY CHARGERSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0)at Tc = 100 600 V VDGR Drain- gate Volt...

STQ1NC60R Data Sheet

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Part Number:
STQ1NC60R
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Description



Application

LOW SWITCH MODE POWER SUPPLIES (SMPS)
BATTERY CHARGER


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0)at Tc = 100 600 V
VDGR Drain- gate Voltage (RGS = 20 k)at Tc = 100 600 V
VGS Gate-Source Voltage ± 30 V
ID Drain Current (continuous) at Tc = 25 0.3 A
ID
Drain Current (continuous) at Tc = 100 		0.19 A
IDM(`) Drain Current (pulsed) 1.2 A
Ptot Total Dissipation at Tc = 25 3.1 W
Derating Factor 0.025 W/
dv/dt(1) Peak Diode Recovery voltage slope 3 V/ns
Tstg Operating Junction Temperature
Storage Temperature		 -65 to 150
Tj -65 to 150
(`) Pulse width limited by safe operating area (1) ISD 14 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX


Description

Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics STQ1NC60R has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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