Features: ` TYPICAL RDS(on) = 12 W` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` NEW HIGH VOLTAGE BENCHMARK` GATE CHARGE MINIMIZED`ADD SUFFIX -AP FOR ORDERING IN AMMOPAKApplication· SWITCH MODE LOW POWER SUPPIES (SMPS)· BATTERY CHARGERSpecifications Symbol Item Value U...
STQ1NC60: Features: ` TYPICAL RDS(on) = 12 W` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` NEW HIGH VOLTAGE BENCHMARK` GATE CHARGE MINIMIZED`ADD SUFFIX -AP FOR ORDERING IN AMMOPAKApplication· SWI...
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Features: ` TYPICAL RDS(on) = 8 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHA...
Symbol |
Item |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
600 |
V |
VDGR |
Drain-gate Voltage (RGS = 20 k) |
600 |
V |
VGS |
Gate- source Voltage |
±30 |
V |
Id |
Drain Current (continuos) at TC = 25°C |
0.38 |
A |
Id |
Drain Current (continuos) at TC = 100°C |
0.24 |
A |
IDM(1) |
Drain Current (pulsed) |
1.52 |
A |
PTOT |
Total Dissipation at TC = 25°C |
3.1 |
W |
Derating Factor |
0.028 |
W/ | |
dv/dt(1) |
Peak Diode Recovery voltage slope |
3 |
V/ns |
TJ TSTG |
Operating Junction Temperature Storage Temperature |
-55 to 150 |
|
Using the latest high voltage MESH OVERLAY]II process, STMicroelectronics STQ1NC60 has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.