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STQ1NC60

Features: ` TYPICAL RDS(on) = 12 W` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` NEW HIGH VOLTAGE BENCHMARK` GATE CHARGE MINIMIZED`ADD SUFFIX -AP FOR ORDERING IN AMMOPAKApplication· SWITCH MODE LOW POWER SUPPIES (SMPS)· BATTERY CHARGERSpecifications Symbol Item Value U...

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SeekIC No. : 004508664 Detail

STQ1NC60: Features: ` TYPICAL RDS(on) = 12 W` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` NEW HIGH VOLTAGE BENCHMARK` GATE CHARGE MINIMIZED`ADD SUFFIX -AP FOR ORDERING IN AMMOPAKApplication· SWI...

STQ1NC60 Data Sheet

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Part Number:
STQ1NC60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Features:

` TYPICAL RDS(on) = 12 W
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZED
`ADD SUFFIX "-AP" FOR ORDERING IN AMMOPAK


Application

· SWITCH MODE LOW POWER SUPPIES (SMPS)
· BATTERY CHARGER


Specifications

Symbol
Item
Value
Unit
VDS
 Drain-source Voltage (VGS = 0)
600
V
VDGR
 Drain-gate Voltage (RGS = 20 k)
600
V
VGS
 Gate- source Voltage
±30
V
Id
 Drain Current (continuos) at TC = 25°C
0.38
A
Id
 Drain Current (continuos) at TC = 100°C
0.24
A
IDM(1)
 Drain Current (pulsed)
1.52
A
PTOT
 Total Dissipation at TC = 25°C
3.1
W
  Derating Factor
0.028
W/
dv/dt(1)
 Peak Diode Recovery voltage slope
3
V/ns
TJ
TSTG
 Operating Junction Temperature
Storage Temperature
-55 to 150




Description

Using the latest high voltage MESH OVERLAY]II process, STMicroelectronics STQ1NC60 has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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