STP9NK50ZFP

MOSFET N-Ch, 500V-0.72ohms 7.2A

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SeekIC No. : 00147109 Detail

STP9NK50ZFP: MOSFET N-Ch, 500V-0.72ohms 7.2A

floor Price/Ceiling Price

US $ 1.02~1.5 / Piece | Get Latest Price
Part Number:
STP9NK50ZFP
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 10~100
  • 100~250
  • Unit Price
  • $1.5
  • $1.34
  • $1.15
  • $1.02
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/11/11

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 7.2 A
Resistance Drain-Source RDS (on) : 0.85 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.85 Ohms
Continuous Drain Current : 7.2 A


Features:

TYPICAL RDS(on) = 0.72 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY



Application

HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
   ADAPTORS AND PFC
LIGHTING



Specifications

Symbol
Parameter
Value
Unit
 STP9NK50Z
STB9NK50Z
STP9NK50ZFP
VDS
Drain-source Voltage (VGS = 0)
500
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
500
V
VGS
Gate- source Voltage
± 30
V
ID
Drain Current (continuous)at TC =25
7.2
7.2(*)
A
ID
Drain Current (continuous)at TC =100
4.5
4.5 (*)
A
IDM ()
Drain Current (pulsed)
28.8
28.8(*) 
A
PTOT
Total Dissipation at TC = 25
110
30
W
Derating Factor
0.88
0.24
W/
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
3500
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V /ns
VISO
Insulation Withstand Voltage (DC)
-
2500
V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
55 to 150
55 to 150




Description

The STP9NK50ZFP SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak-en to ensure a very good dv/dt capability for the most demanding applications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutionary STP9NK50ZFP MDmesh™ products.


Parameters:

Technical/Catalog InformationSTP9NK50ZFP
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C7.2A
Rds On (Max) @ Id, Vgs850 mOhm @ 3.6A, 10V
Input Capacitance (Ciss) @ Vds 910pF @ 25V
Power - Max30W
PackagingTube
Gate Charge (Qg) @ Vgs32nC @ 10V
Package / CaseTO-220FP
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP9NK50ZFP
STP9NK50ZFP



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