MOSFET N-Ch, 500V-0.72ohms 7.2A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 7.2 A | ||
Resistance Drain-Source RDS (on) : | 0.85 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220FP | Packaging : | Tube |
Symbol |
Parameter |
Value |
Unit | |
---|---|---|---|---|
STP9NK50Z STB9NK50Z |
STP9NK50ZFP | |||
VDS |
Drain-source Voltage (VGS = 0) |
500 |
V | |
VDGR |
Drain-gate Voltage (RGS = 20 kΩ) |
500 |
V | |
VGS |
Gate- source Voltage |
± 30 |
V | |
ID |
Drain Current (continuous)at TC =25 |
7.2 |
7.2(*) |
A |
ID |
Drain Current (continuous)at TC =100 |
4.5 |
4.5 (*) |
A |
IDM () |
Drain Current (pulsed) |
28.8 |
28.8(*) |
A |
PTOT |
Total Dissipation at TC = 25 |
110 |
30 |
W |
Derating Factor |
0.88 |
0.24 |
W/ | |
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5KΩ) |
3500 |
V | |
dv/dt (1) |
Peak Diode Recovery voltage slope |
4.5 |
V /ns | |
VISO |
Insulation Withstand Voltage (DC) |
- |
2500 |
V |
Tj Tstg |
Operating Junction Temperature Storage Temperature |
55 to 150 55 to 150 |
|
Technical/Catalog Information | STP9NK50ZFP |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25° C | 7.2A |
Rds On (Max) @ Id, Vgs | 850 mOhm @ 3.6A, 10V |
Input Capacitance (Ciss) @ Vds | 910pF @ 25V |
Power - Max | 30W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 32nC @ 10V |
Package / Case | TO-220FP |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STP9NK50ZFP STP9NK50ZFP |