STP90NF03L

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Continuous Drain Current : 90 A
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.0065 Ohms


Application

 SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain-gate Voltage (RGS = 20 k)	30	V
VGS	Gate- source Voltage	± 20	V
ID	Drain Current (continuos) at TC = 25°C	90	A
ID	Drain Current (continuos) at TC = 100°C	65	A
IDM ()	Drain Current (pulsed)	360	A
PTOT	Total Dissipation at TC = 25°C	150	W
	Derating Factor	0.73	W/°C
Tstg	Storage Temperature	55 to 175	°C
Tj	Max. Operating Junction Temperature	175	°C

Description

This STP90NF03L application specific Power Mosfet is the third generation of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, STP90NF03L gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.

Parameters:

Technical/Catalog Information	STP90NF03L
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	90A
Rds On (Max) @ Id, Vgs	6.5 mOhm @ 45A, 10V
Input Capacitance (Ciss) @ Vds	2700pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	47nC @ 5V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP90NF03L STP90NF03L 497 7535 5 ND 49775355ND 497-7535-5