MOSFET STripFET MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 40 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 80 A | ||
Resistance Drain-Source RDS (on) : | 5.4 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Symbol | Parameter | Value | Unit |
VDS | Drain-source Voltage (VGS=0) | 40 | V |
VGS | Gate-Source Voltage | ± 20 | V |
ID Note 1 | Drain Current (continuous) at TC = 25°C | 80 | A |
ID | Drain Current (continuous) at TC = 100°C | 65 | A |
IDM Note 2 | Drain Current (pulsed) | 320 | A |
PTOT | Total Dissipation at TC = 25°C | 110 | W |
Derating Factor | 0.73 | W/°C | |
dv/dt Note 3 | Peak Diode Recovery voltage slo | 8 | V/ns |
EAS Note 4 | Single Pulse Avalanche Energy | 400 | mJ |
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 175 | °C |
This N-Channel enhancement mode MOSFET STP95N04 is the latest refinement of STMicroelectronic unique "Single Feature Size™" strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.
Technical/Catalog Information | STP95N04 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25° C | 80A |
Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 40A, 10V |
Input Capacitance (Ciss) @ Vds | 2200pF @ 25V |
Power - Max | 110W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 54nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STP95N04 STP95N04 497 5132 5 ND 49751325ND 497-5132-5 |