STP9NB50

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.85 Ohms
Continuous Drain Current : 8.6 A


Features:

TYPE	VDSS	RDS(on)	ID
STP9NB50	500 V	< 0.85	8.6 A

` TYPICAL R<sub>DS(on)</sub> = 0.75
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED


Application

·HIGH CURRENT, HIGH SPEED SWITCHING
·SWITH MODE POWER SUPPLIES (SMPS)
·DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Specifications

Symbol	Parameter	Value	Units
VDS	Drain-source Voltage (VGS = 0)	500	V
VDGR	Drain- gate Voltage (RGS = 20 k)	500	V
VGS	Gate-source Voltage	±30	V
ID	Drain Current (continuous) at Tc = 25	8.6	A
ID	Drain Current (continuous) at Tc = 100	5.4	A
IDM(•)	Drain Current (pulsed)	34.4	A
Ptot	Total Dissipation at Tc = 25	125	W
	Derating Factor	1	W/
dv/dt (1)	Peak Diode Recovery voltage slope	4.5	V/ns
VISO	Insulat ion Withstand Voltage (DC)	-
Tstg	Storage Temperature	-65 to +150
Tj	Max. Operating Junction Temperature	150

(•)Pulse width limited by safe operating area

(1)I_SD<9A, di/dt<200A/, V_DD<V_(BR)DSS,TJ<T_JMAX


Description

Using the latest high voltage MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs STP9NB50 with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area,  exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.