MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 800 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 6.5 A | ||
Resistance Drain-Source RDS (on) : | 1.05 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Technical/Catalog Information | STP7NM80 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25° C | 6.5A |
Rds On (Max) @ Id, Vgs | 1.05 Ohm @ 3.25A, 10V |
Input Capacitance (Ciss) @ Vds | 620pF @ 25V |
Power - Max | 90W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 18nC @ 10V |
Package / Case | TO-220 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STP7NM80 STP7NM80 497 8813 5 ND 49788135ND 497-8813-5 |