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STP70N10F4

MOSFET N-Ch, 100V-0.015ohms 60A

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SeekIC No. : 00159749 Detail

STP70N10F4: MOSFET N-Ch, 100V-0.015ohms 60A

STP70N10F4 Data Sheet

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Part Number:
STP70N10F4
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 65 A
Resistance Drain-Source RDS (on) : 0.015 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.015 Ohms
Continuous Drain Current : 65 A


Parameters:

Technical/Catalog InformationSTP70N10F4
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C65A
Rds On (Max) @ Id, Vgs19.5 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 5800pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs85nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP70N10F4
STP70N10F4
497 8812 5 ND
49788125ND
497-8812-5



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