Features: · TYPICAL RDS(on) = 1.1W· EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES· 100% AVALANCHE TESTED· VERY LOW GATE INPUT RESISTANCE· GATE CHARGE MINIMIZEDApplication· SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION· WELDING EQUIPMENTSpecifications ...
STP7NC70ZFP: Features: · TYPICAL RDS(on) = 1.1W· EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES· 100% AVALANCHE TESTED· VERY LOW GATE INPUT RESISTANCE· GATE CHARGE MINIMIZEDApplication· SINGLE...
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· TYPICAL RDS(on) = 1.1W
· EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES
· 100% AVALANCHE TESTED
· VERY LOW GATE INPUT RESISTANCE
· GATE CHARGE MINIMIZED
· SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
· WELDING EQUIPMENT
Symbol |
Parameter |
Value |
Uni t | |
STP(B)7NC70Z(-1) | STP7NC70ZFP | |||
VDS |
Drain-source Voltage (VGS = 0) |
700 |
V | |
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
700 |
V | |
VGS |
Gate-source Voltage |
± 25 |
V | |
ID |
Drain Current (continuous) at Tc = 25 |
6 |
6(*) |
A |
ID |
Drain Current (continuous) at Tc = 100 |
3.7 |
3.7(*) |
A |
IDM(•) |
Drain Current (pulsed) |
24 |
24 |
A |
Ptot |
Total Dissipation at Tc = 25 |
125 |
40 |
W |
Derating Factor |
1 |
0.32 |
W/ | |
IGS |
Gate-source Current |
±50 |
mA | |
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=15KW) |
3 |
KV | |
dv/dt |
Peak Diode Recovery voltage slope |
3 |
V/ns | |
VISO |
Insulation Withstand Voltage (DC) |
-- |
2000 |
V |
Tstg |
Storage Temperature |
-65 to 150 |
||
Tj |
Max. Operating Junction Temperature |
175 |
(•)Pulse width limited by safe operating area
(1)ISD 6A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX
(2).Limited only by maximum temperature allowed