STP7NC70ZFP

Features: · TYPICAL RDS(on) = 1.1W· EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES· 100% AVALANCHE TESTED· VERY LOW GATE INPUT RESISTANCE· GATE CHARGE MINIMIZEDApplication· SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION· WELDING EQUIPMENTSpecifications ...

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SeekIC No. : 004508527 Detail

STP7NC70ZFP: Features: · TYPICAL RDS(on) = 1.1W· EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES· 100% AVALANCHE TESTED· VERY LOW GATE INPUT RESISTANCE· GATE CHARGE MINIMIZEDApplication· SINGLE...

floor Price/Ceiling Price

Part Number:
STP7NC70ZFP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Description



Features:

·  TYPICAL RDS(on) = 1.1W
·  EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES
·  100% AVALANCHE TESTED
·  VERY LOW GATE INPUT RESISTANCE
·  GATE CHARGE MINIMIZED




Application

·  SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
·  WELDING EQUIPMENT




Specifications

Symbol
Parameter
Value
Uni t
STP(B)7NC70Z(-1) STP7NC70ZFP
VDS
Drain-source Voltage (VGS = 0)
700
V
VDGR
Drain- gate Voltage (RGS = 20 kW)
700
V
VGS
Gate-source Voltage
± 25
V
ID
Drain Current (continuous) at Tc = 25
6
6(*)
A
ID
Drain Current (continuous) at Tc = 100
3.7
3.7(*)
A
IDM(•)
Drain Current (pulsed)
24
24
A
Ptot
Total Dissipation at Tc = 25
125
40
W
Derating Factor
1
0.32
W/
IGS
Gate-source Current
±50
mA
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=15KW)
3
KV
dv/dt
Peak Diode Recovery voltage slope
3
V/ns
VISO
Insulation Withstand Voltage (DC)
--
2000
V
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
175

(•)Pulse width limited by safe operating area
(1)ISD 6A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX
(2).Limited only by maximum temperature allowed




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