Packaging
:
Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Drain-Source Breakdown Voltage
: 700 V
Continuous Drain Current
: 6 A
Package / Case
: TO-220
Gate-Source Breakdown Voltage
: +/- 25 V
Resistance Drain-Source RDS (on)
: 4 Ohms
Features: · TYPICAL RDS(on) = 1.1W
· EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES
· 100% AVALANCHE TESTED
· VERY LOW GATE INPUT RESISTANCE
· GATE CHARGE MINIMIZED
Application· SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
· WELDING EQUIPMENT
Specifications
|
Symbol |
Parameter |
Value |
Uni t |
| STP(B)7NC70Z(-1) |
STP7NC70ZFP |
|
VDS |
Drain-source Voltage (VGS = 0) |
700 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
700 |
V |
|
VGS |
Gate-source Voltage |
± 25 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
6 |
6(*) |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
3.7 |
3.7(*) |
A |
|
IDM(•) |
Drain Current (pulsed) |
24 |
24 |
A |
|
Ptot |
Total Dissipation at Tc = 25 |
125 |
40 |
W |
|
|
Derating Factor |
1 |
0.32 |
W/ |
|
IGS |
Gate-source Current |
±50 |
mA |
|
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=15KW) |
3 |
KV |
|
dv/dt |
Peak Diode Recovery voltage slope |
3 |
V/ns |
|
VISO |
Insulation Withstand Voltage (DC) |
-- |
2000 |
V |
|
Tstg |
Storage Temperature |
-65 to 150 |
|
|
Tj |
Max. Operating Junction Temperature |
175 |
|
(•)Pulse width limited by safe operating area
(1)ISD 6A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX
(2).Limited only by maximum temperature allowed
STP7NC70Z Data Sheet
