STP75NF75L

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Drain-Source Breakdown Voltage : 75 V
Package / Case : TO-220
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.01 Ohms


Features:

·TYPICAL RDS(on) = 0.009W
·EXCEPTIONAL dv/dt CAPABILITY
·100% AVALANCHE TESTED
·LOW THRESHOLD DRIVE


Application

·SOLENOID AND RELAY DRIVERS
·DC MOTOR CONTROL
·DC-DC CONVERTERS
·AUTOMOTIVE ENVIRONMENT


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	75	V
VDGR	Drain-gate Voltage (RGS = 20 k)	75	V
VGS	Gate- source Voltage	± 15	V
ID(`)	Drain Current (continuos) at TC = 25	75	A
ID	Drain Current (continuos) at TC = 100	75	A
IDM(``)	Drain Current (pulsed)	300	A
Ptot	Total Dissipation at TC = 25	300	W
	Derating Factor	2	W/
dv/dt (1)	Peak Diode Recovery voltage slope	20	V/ns
EAS (2)	Single Pulse Avalanche Energy	680	mJ
Tstg	Storage Temperature	-55 to 175
Tj	Max. Operating Junction Temperature

Description

This STP75NF75L MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.