STP75NF75

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 75 V
Continuous Drain Current : 80 A
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 11 mOhms


Features:

`TYPICAL RDS(on) = 0.0095 W
`EXCEPTIONAL dv/dt CAPABILITY
`100% AVALANCHE TESTED
`SURFACE-MOUNTING D2PAK (TO-263)
`POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")




Application

·SOLENOID AND RELAY DRIVERS
·DC MOTOR CONTROL
·DC-DC CONVERTERS
·AUTOMOTIVE ENVIRONMENT




Specifications

Symbol	Parameter	Value		Unit
		STB75NF75 STP75NF75	STP75NF75FP
VDS	Drain-source Voltage (VGS = 0)	75		V
VDGR	Drain-gate Voltage (RGS = 20 k)	75		V
VGS	Gate- source Voltage	± 20		V
ID	Drain Current (continuous) at TC = 25	80	80(*)	A
ID	Drain Current (continuous) at TC = 100	70	70(*)	A
IDM(`)	Drain Current (pulsed)	320	320(*)	A
Ptot	Total Dissipation at TC = 25	300	45	W
	Derating Factor	2.0	0.3	W/
dv/dt (1)	Peak Diode Recovery voltage slope	12		V/ns
EAS (2)	Single Pulse Avalanche Energy	700		mJ
VISO	Insulation Withstand Voltage (DC)	------	2000	V
Tstg	Storage Temperature	-55 to 175
Tj	Operating Junction Temperature

Description

This MOSFET series STP75NF75 realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.