STP75NF75-M

The STP75NF75-M This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

Features of the STP75NF75-M are:(1)Exceptional dv/dt capability; (2)100% avalanche tested.

The absolute maximum ratings of the STP75NF75-M can be summarized as:(1)VDS Drain-source voltage (VGS = 0) :75 V; (2)VDGR Drain-gate voltage (RGS = 20K?) :75V; (3)VGS Gate-source voltage :± 20 V; (4)ID Drain current (continuous) at TC = 25°C : 80 A; (5)ID Drain current (continuous) at TC=100°C:70 A; (6)IDM Drain current (pulsed) : 320  A; (7)PTOT Total dissipation at TC = 25°C :300 W; (8)Derating factor: 2.0 W/°C; (9)dv/dt  Peak diode recovery voltage slope :12 V/ns.

If you want to know more information such as the STP75NF75-M electrical characteristics ,please download the datasheet in www.seekdatasheet.com .